Device and Circuit Simulation, Measurement and Modeling 105 4.3.11 High Frequency Measurements on InAs Nanowire Field- Effect Transistors

Introduction The low-band-gap, high mobility InAs semiconductor is well suited for nanowire devices. So far, fascinating DC characteristics of InAs nanowire field-effect transistors (NW-FETs) [1],[2] have been shown, whereas the high speed potential is not yet demonstrated. The major challenges towards a reliable RF characterization of single nanowire transistors, regardless of the material system, are the dominant parasitic capacitances and the small signal power. We report here on high frequency measurements based on a coplanar waveguide contact pattern for on-wafer characterization. Small signal scattering parameter measurements are performed on-wafer. The process of de-embedding will be discussed and a preliminary small signal model will be given.